Title :
A 2.6 GHz Class-E power amplifier design
Author :
Yun Wang ; Xiaohong Tang
Author_Institution :
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A design of switching power amplifier (PA) with high efficiency and considerable output power is reported. This power amplifier is based on commercial available GaN HEMT device. Design process based on Source/Load Pull technique is described in detail. The simulation results show that the proposed amplifier achieves drain efficiency of 85%, power added efficiency of 82.5% and 40 dBm output power at 2.6 GHz. This power amplifier could be applied to TD-LTE base station.
Keywords :
III-V semiconductors; Long Term Evolution; UHF power amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN HEMT device; TD-LTE base station; efficiency 82.5 percent; efficiency 85 percent; frequency 2.6 GHz; source-load pull technique; switching power amplifier; Bandwidth; Educational institutions; HEMTs; Layout; Switches; Topology; Class-E; Power amplifier; TD-LTE; high efficiency; source/load Pull;
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on
Conference_Location :
Chengdu
DOI :
10.1109/MMWCST.2013.6814646
