DocumentCode :
2090266
Title :
De-embedding of on-wafer lightwave measurements performed on a monolithic 10 Gb/s InP receiver-oeic
Author :
Kaiser, D. ; Grobkopf, H. ; Grotjahn, F. ; Gyuro, I. ; Kuebart, W. ; Reemtsma, J.H. ; Eisele, H.
Author_Institution :
Alcatel SEL Research Centre, Dep. Opto-Electronic Components ZFZ/WO Lorenzstr. 10, D-70435 Stuttgart, Germany. Phone: +49 711 821 5840, Fax: +49 7118216355
fYear :
1993
fDate :
6-10 Sept. 1993
Firstpage :
361
Lastpage :
363
Abstract :
Small-and large-signal measurements on 10 Gb/s monolithic receiver-OEICs of straight forward termination type consisting of InGaAs/InP pin-photodiodes and InAIAs/InGaAs/InP HEMTs are presented. On-wafer characterization of both, isolated devices and OEICs is perforrned using deembedding procedures, which allow for comparison of theoretical and experimental performance.
Keywords :
Calibration; Capacitance measurement; Coaxial components; HEMTs; Indium phosphide; MODFETs; Optoelectronic devices; Performance evaluation; Probes; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
Type :
conf
DOI :
10.1109/EUMA.1993.336893
Filename :
4136622
Link To Document :
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