DocumentCode :
2090285
Title :
Simulation Based Feasibility Study of Wireless RF Interconnects for 3D ICs
Author :
More, Ankit ; Taskin, Baris
Author_Institution :
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA
fYear :
2010
fDate :
5-7 July 2010
Firstpage :
228
Lastpage :
231
Abstract :
A feasibility study of inter-tier wireless interconnects to be used in conjunction with through silicon vias (TSVs) for global communication in 3D ICs is presented. The feasibility is shown by performing a full wave electromagnetic analysis of on-chip communicating antennas in a 3D IC, modeled according to a fully-depleted silicon on insulator (FDSOI) 3D circuit integration technology. It is shown that the selected transmitting and receiving antennas provide a strong signal coupling at the adjacent (-6.67 dB) and the non-adjacent (-6.93 dB) tiers of the 3D IC at a radiation frequency of 10GHz. In addition to permitting non-adjacent tier communication, wireless interconnects are superior to TSVs in permitting non-vertically aligned connections between IC tiers.
Keywords :
integrated circuit interconnections; three-dimensional integrated circuits; 3D IC; feasibility study; full wave electromagnetic analysis; fully-depleted silicon on insulator; through silicon vias; wireless RF interconnects; Integrated circuit interconnections; Integrated circuit modeling; Receiving antennas; Three dimensional displays; Transmitting antennas; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI (ISVLSI), 2010 IEEE Computer Society Annual Symposium on
Conference_Location :
Lixouri, Kefalonia
Print_ISBN :
978-1-4244-7321-2
Type :
conf
DOI :
10.1109/ISVLSI.2010.33
Filename :
5572776
Link To Document :
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