Title :
Active Millimeter-Wave Phase-Shift Doherty Power Amplifier in 45-nm SOI CMOS
Author :
Agah, A. ; Dabag, Hayg-Taniel ; Hanafi, B. ; Asbeck, P.M. ; Buckwalter, James F. ; Larson, Lawrence E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
Abstract :
A 45 GHz active phase-shift Doherty PA is proposed and implemented in 45-nm SOI CMOS. The quarter wave-length transmission line at the input of the auxiliary amplifier is replaced by an amplifier, increasing the gain and PAE by more than 1 dB and 5%, while reducing the die area. Use of slow-wave coplanar waveguides (S-CPW) improves the PAE and gain by approximately 3% and 1 dB, and further reduces the die area. Two-stack FET amplifiers are used as the main and auxiliary amplifiers, allowing a supply voltage of 2.5 V and increasing the output power. The active phase-shift Doherty amplifier demonstrates a peak power gain and PAE of 8 dB and 20% at 45 GHz. It occupies 0.45 mm2, and at 6-dB back-off power, the PAE is 21%.
Keywords :
CMOS analogue integrated circuits; coplanar waveguides; millimetre wave amplifiers; millimetre wave integrated circuits; silicon-on-insulator; transmission lines; Doherty PA; PAE; S-CPW; SOI CMOS; active millimeter-wave phase-shift Doherty power amplifier; efficiency 20 percent; efficiency 21 percent; frequency 45 GHz; gain 8 dB; power-added efficiency; quarter wave-length transmission line; size 45 nm; slow-wave coplanar waveguides; voltage 2.5 V; CMOS integrated circuits; CMOS technology; Field effect transistors; Gain; Impedance; Millimeter wave technology; Power transmission lines; CMOS; Class AB; device parasitic; impedance matching; load pull; millimeter-wave; power amplifier; power combining; power-added efficiency (PAE); reliability; transformer;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2013.2269854
