• DocumentCode
    2090303
  • Title

    The effective damage-free megasonic cleaning using N2 dissolved APM

  • Author

    Hagimoto, Yoshiya ; Asada, Kazumi ; Iwamoto, Hayato

  • Author_Institution
    Sony Corp., Kanagawa, Japan
  • fYear
    2005
  • fDate
    13-15 Sept. 2005
  • Firstpage
    215
  • Lastpage
    218
  • Abstract
    In order to improve yields in the semiconductor manufacturing, it is very important to develop a cleaning process which can remove particles efficiently without damaging the fine structures of the advanced devices. We have found that it was possible to clean wafers efficiently without damage to finely patterned structures by the megasonic cleaning using the conventional APM (ammonia-hydrogen peroxide mixture) into which N2 gasses were dissolved. It was revealed that the conventional APM can be applied to the advanced processes using this cleaning technology.
  • Keywords
    integrated circuit yield; nitrogen; surface cleaning; N2; ammonia-hydrogen peroxide mixture; damage-free megasonic cleaning; particle removal efficiency; semiconductor manufacturing; semiconductor yield; wet cleaning technology; Chemical processes; Chemical technology; Cleaning; Costs; Electrodes; Etching; Manufacturing processes; Production; Semiconductor device manufacture; Silicon devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
  • Print_ISBN
    0-7803-9143-8
  • Type

    conf

  • DOI
    10.1109/ISSM.2005.1513339
  • Filename
    1513339
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2090303