DocumentCode
2090315
Title
Damage-free wafer cleaning by water and gas mixture jet
Author
Hirota, Yusaku ; Kanno, Itaru ; Fujiwara, Keiji ; Nagayasu, Hiroshi ; Shimose, Shouichi
Author_Institution
Renesas Technol. Corp., Tokyo Electron Ltd., Hyogo, Japan
fYear
2005
fDate
13-15 Sept. 2005
Firstpage
219
Lastpage
222
Abstract
A damage-free single wafer cleaning method using a water and gas mixture jet (two-fluid jet) has been developed. It was confirmed that the combination cleaning process of the two-fluid jet and APM (NH4OH/H2O2/DIW) dispense showed higher cleaning performance than that of conventional batch-type APM cleaning for 65 nm gate patterns. The cleaning performance of the two-fluid jet was improved by adjusting the velocity distribution of water droplets. Two-fluid jet cleaning can also be applied to Cu interconnects processes.
Keywords
copper; drops; integrated circuit interconnections; integrated circuit layout; integrated circuit manufacture; jets; large scale integration; surface cleaning; two-phase flow; APM; Cu; Cu interconnects process; damage-free single wafer cleaning method; gate patterns; two-fluid jet; velocity distribution; water droplets; water-gas mixture jet; Chemical processes; Costs; Electrons; Etching; Fluid flow; Large scale integration; Manufacturing processes; Surface cleaning; Temperature; Velocity control;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN
0-7803-9143-8
Type
conf
DOI
10.1109/ISSM.2005.1513340
Filename
1513340
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