DocumentCode
2090356
Title
Correlation between theory and data for mechanisms leading to dielectric breakdown
Author
Abadeer, W.W. ; Vollertsen, R.-P. ; Bolam, R.J. ; DiMaria, D.J. ; Cartier, E.
Author_Institution
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
fYear
1994
fDate
7-9 June 1994
Firstpage
43
Lastpage
44
Abstract
The charge-to-breakdown (Q/sub bd/) and time-to-breakdown (t/sub bd/) have been measured for 10-nm oxides in the range of 10-16 MV/cm, at 30/spl deg/C and 150/spl deg/C on N-FETs. These data strongly suggest two distinct physical mechanisms contributing to oxide breakdown. Based on model calculations, the mechanisms are attributed to trap creation and impact ionization.<>
Keywords
electron traps; impact ionisation; insulated gate field effect transistors; semiconductor device models; 10 nm; 150 degC; 30 degC; N-FETs; charge-to-breakdown; dielectric breakdown; impact ionization; model calculations; oxide breakdown; physical mechanisms; time-to-breakdown; trap creation; Current measurement; Degradation; Design for quality; Dielectric breakdown; Electric breakdown; Electron traps; Impact ionization; Stress; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324386
Filename
324386
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