Device design of partial-SOI SJ-LDMOS with n type charge islands

Author

Tang Tang

Author_Institution

Res. Inst. of Electron. Sci. & Technol., UESTC, Chengdu, China

fYear

2013

fDate

24-25 Oct. 2013

Firstpage

351

Lastpage

354

Abstract

In this paper, addressed SOI SJ-LDMOS high voltage devices, from the beginning of conventional SOI SJ-LDMOS structure, the charge balance effect, the lateral and vertical breakdown voltage theory, self-heating effect and the new device structure are researched. Based on the above aspects, a novel charge-mode SOI SJ-LDMOS high voltage device structure is proposed, and some simulation experiment results are obtained from the novel device. Compared with the 89.5V of conventional structure, the breakdown voltage of the new device structure increased to 212.5V, the value increased by 137.4%.

Keywords

MIS devices; heating; power semiconductor devices; semiconductor device breakdown; silicon-on-insulator; charge balance effect; device design; high voltage device; lateral breakdown voltage theory; n-type charge islands; partial SOI SJ-LDMOS; self-heating effect; silicon-on-insulator; superjunction laterally diffused metal oxide semiconductor; vertical breakdown voltage theory; voltage 212.5 V; Breakdown voltage; Dielectrics; Electric breakdown; Electric fields; Electric potential; Silicon; Substrates; SOI; Super Junction; breakdown voltage; charge balance; self-heating effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/MMWCST.2013.6814651

Filename

6814651