DocumentCode
2090432
Title
Residual oxide detection with automated E-beam inspection
Author
Lin, Luke ; Chen, J.Y. ; Luo, Shain-De ; Wong, Wen-Yi ; Oestreich, Steve ; Tsai, Alex ; Yao, Ivan ; Grella, Luca
Author_Institution
Powerchip Semicond. Corp., Hsinchu, Taiwan
fYear
2005
fDate
13-15 Sept. 2005
Firstpage
241
Lastpage
244
Abstract
Shrinking contact design rules and increasingly higher aspect ratios have dramatically decreased the process window for photo and etch engineers. Optimizing the proper amount of overetch to clear all contacts while not inducing overetch damage is an ongoing process variable. Production compatible automated E-beam inspections, utilizing voltage contrast (VC) methods, have demonstrated the capability to detect underetched contacts, however the question always remains, "how much remaining oxide is in the underetched contacts?". This proposed method takes inspection results one step further and attempts to measure the gray scale difference between a defect and a known good reference, (KGRef), and associate a remaining oxide thickness to the defective contact. The KGRef in this inspection is a "dark" contact with a lighter background, while defective contacts appear "bright".
Keywords
automatic optical inspection; crystal defects; electron beam applications; etching; integrated circuit yield; photolithography; aspect ratios; automated E-beam inspection; contact design rules; dark contact; residual oxide detection; underetched contacts; voltage contrast method; Contacts; Design engineering; Detectors; Electrons; Etching; Inspection; Probes; Production; Thickness measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN
0-7803-9143-8
Type
conf
DOI
10.1109/ISSM.2005.1513346
Filename
1513346
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