• DocumentCode
    2090432
  • Title

    Residual oxide detection with automated E-beam inspection

  • Author

    Lin, Luke ; Chen, J.Y. ; Luo, Shain-De ; Wong, Wen-Yi ; Oestreich, Steve ; Tsai, Alex ; Yao, Ivan ; Grella, Luca

  • Author_Institution
    Powerchip Semicond. Corp., Hsinchu, Taiwan
  • fYear
    2005
  • fDate
    13-15 Sept. 2005
  • Firstpage
    241
  • Lastpage
    244
  • Abstract
    Shrinking contact design rules and increasingly higher aspect ratios have dramatically decreased the process window for photo and etch engineers. Optimizing the proper amount of overetch to clear all contacts while not inducing overetch damage is an ongoing process variable. Production compatible automated E-beam inspections, utilizing voltage contrast (VC) methods, have demonstrated the capability to detect underetched contacts, however the question always remains, "how much remaining oxide is in the underetched contacts?". This proposed method takes inspection results one step further and attempts to measure the gray scale difference between a defect and a known good reference, (KGRef), and associate a remaining oxide thickness to the defective contact. The KGRef in this inspection is a "dark" contact with a lighter background, while defective contacts appear "bright".
  • Keywords
    automatic optical inspection; crystal defects; electron beam applications; etching; integrated circuit yield; photolithography; aspect ratios; automated E-beam inspection; contact design rules; dark contact; residual oxide detection; underetched contacts; voltage contrast method; Contacts; Design engineering; Detectors; Electrons; Etching; Inspection; Probes; Production; Thickness measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
  • Print_ISBN
    0-7803-9143-8
  • Type

    conf

  • DOI
    10.1109/ISSM.2005.1513346
  • Filename
    1513346