A CMOS-compatible, low power and low noise gated BJT on TFSOI substrate

Author

Chen, V.M.C. ; Woo, J.C.S.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1994

fDate

7-9 June 1994

Firstpage

35

Lastpage

36

Abstract

A novel shallow buried channel gated BJT has been fabricated on SIMOX wafers. The fabrication is simple and highly compatible with a typical SOI CMOS process flow. The device has low turn-on voltage, ideal BJT I-V characteristics with current gain higher than 1000, and 1.5 times better transconductance and current drive than a SOI NMOS of the same dimensions. Careful measurements show that the buried channel device has a noise performance an order of magnitude better than a surface channel gated BJT. This device is suitable for low power applications, especially those with both analog and digital elements.<>

Keywords

BiCMOS integrated circuits; SIMOX; bipolar transistors; integrated circuit technology; semiconductor device noise; BiCMOS technology; I-V characteristics; SIMOX wafers; SOI CMOS process flow; TFSOI substrate; current drive; current gain; low power applications; noise performance; shallow buried channel gated BJT; transconductance; turn-on voltage; BiCMOS integrated circuits; Electrons; Fabrication; Implants; Low voltage; MOSFETs; Oxidation; Power engineering and energy; Resists; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1921-4

Type

conf

DOI

10.1109/VLSIT.1994.324390

Filename

324390