Title :
Ultra-thin film SOI/CMOS with selective-epi source/drain for low series resistance, high drive current
Author :
Hwang, J.M. ; Wise, R. ; Yee, E. ; Houston, T. ; Pollack, G.P.
Author_Institution :
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A self-aligned selective epitaxial technique is used to overcome the high source/drain resistance problem in ultra-thin film SOI/CMOS devices. Very low series resistances, comparable to those for bulk CMOS devices, are demonstrated with this selective-epi source/drain.<>
Keywords :
CMOS integrated circuits; SIMOX; integrated circuit technology; semiconductor-insulator boundaries; silicon; SIMOX; drive current; selective-epi source/drain; self-aligned selective epitaxial technique; series resistance; ultra-thin film SOI/CMOS; Annealing; Boron; Immune system; Implants; MOS devices; Medical simulation; Semiconductor films; Silicon; Threshold voltage; Transistors;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324391
