Performance Optimization of Conventional MOS-Like Carbon Nanotube-FETs Based on Dual-Gate-Material

Due to carriers Band-To-Band-Tunneling (BTBT) through channel-source/drain contacts, Conventional MOS-like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device design based on dual gate material is proposed. The simulation results show that, with proper choice of tuning gate material, this device design can not only reduce the ambipolar conductance and increase the available ON-OFF current ratio but also decrease the average sub-threshold swing, which are all very desirable in circuit design to reduce the system power and improve the working frequency as well. Further study reveals the fact that the performance of the proposed design depends highly on the choice of tuning gate material which should be paid with much attention in application.