Bias dependence of noise correlation in MAGFETs

Author

Castaldo, Fernando C. ; Cajueiro, João Paulo C ; dos Reis, Carlos Alberto dos

fYear

2003

fDate

8-11 Sept. 2003

Firstpage

187

Lastpage

190

Abstract

In this paper, measurement results of noise power spectral density in p-channel split-drain MAGFETs operating under various levels of bias current are presented and discussed. It has been observed that correlation increases for decreasing levels of bias current. For currents below 5 μA, noise correlation is higher than 50%, rising rapidly towards total correlation. These results indicate that this type of magnetic sensor can be used for low level detection, contradicting what has been so far mentioned in the literature. Measurements were made for bias current ranging from 2 μA to circa 70 μA using MAGFETs manufactured in 0.8 μm CMOS with geometric aspect ratios of 10 μm/10 μm, 24 μm/24 μm and 24 μm/30 μm.

Keywords

MOSFET; magnetic sensors; semiconductor device measurement; semiconductor device noise; 0.8 micron; 10 micron; 2 to 70 muA; 24 micron; 30 micron; CMOS; MAGFET; bias current level; low level magnetic flux detection; magnetic sensor; noise correlation bias dependence; noise power spectral density; p-channel split-drain MAGFET; sensor geometric aspect ratio; smart magnetic flux density sensors; Current measurement; MOSFETs; Magnetic flux density; Magnetic materials; Magnetic noise; Magnetic sensors; Noise level; Performance analysis; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits and Systems Design, 2003. SBCCI 2003. Proceedings. 16th Symposium on

Print_ISBN

0-7695-2009-X

Type

conf

DOI

10.1109/SBCCI.2003.1232827

Filename

1232827