High performance atmospheric plasma abatement system for PFC reduction

Author

Mangyou, Hirotaka ; Watanabe, Nobuaki ; Hattori, Kenji ; Watanabe, Tadaharu ; Sugimori, Yoshiaki ; Shibuya, Kazunobu ; Hasaka, Satoshi

Author_Institution

Taiyo-Nippon Saonso Corp., Kanagawa, Japan

fYear

2005

fDate

13-15 Sept. 2005

Firstpage

263

Lastpage

266

Abstract

Newly developed atmospheric plasma abatement system is suitable to an abatement for single tool of oxide etcher and plasma enhanced CVD for chamber cleaning. Optimized performance of microwave plasma cavity enables to treat up to 80 L/min of CF₄ exhaust with 95% of DRE at the maximum power of 5.9 kW. This system is applicable to the flow rate range of 40 L/min to 80 L/min. We believe that our proposed plasma abatement system meets semiconductor industry requirements of minimizing COO for PFC reduction.

Keywords

air pollution control; etching; exhaust systems; global warming; integrated circuit manufacture; plasma CVD; surface cleaning; CF₄; PFC reduction; atmospheric plasma abatement system; chamber cleaning; exhaust system; microwave plasma cavity; oxide etcher; plasma enhanced CVD; semiconductor industry; Cleaning; Combustion; Costs; Electromagnetic heating; Electronics industry; Etching; Gases; High power microwave generation; Plasma applications; Plasma waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on

Print_ISBN

0-7803-9143-8

Type

conf

DOI

10.1109/ISSM.2005.1513352

Filename

1513352