DocumentCode :
2090672
Title :
Influence of electrical conditions on silicon pulse shaping and modelocking
Author :
Shiming Gao ; Lizhong Cao ; Bing Sun ; Sichang Jiang ; Kai Hu ; Yizhen Wei
Author_Institution :
Centre for Opt. & Electromagn. Res., Zhejiang Univ., Hangzhou, China
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
3
Abstract :
The silicon pulse shaping and modelocking laser is characterized by varying the input electrical conditions. A narrower output pulse can be obtained by increasing modulation depth, reducing duty cycle, and increasing driving current of amplifier.
Keywords :
laser mode locking; optical modulation; optical pulse shaping; silicon; amplifier driving current; duty cycle; electrical conditions; laser mode locking; modulation depth; silicon pulse shaping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510678
Link To Document :
بازگشت