Title :
Ultrafast conductivity in amorphous semiconductors studied by time-resolved thz spectroscopy
Author :
Nampoothiri, A. V Vasudevan ; Dexheimer, S.L.
Author_Institution :
Dept. of Phys., Washington State Univ., Pullman, WA
Abstract :
We present studies of photoconductivity on picosecond time scales in amorphous silicon (a-Si:H) and related materials using time-resolved THz techniques. We find a strongly non-Drude response with a power-law frequency dependence characteristic of disordered systems
Keywords :
amorphous semiconductors; elemental semiconductors; high-speed optical techniques; photoconductivity; silicon; time resolved spectroscopy; Si:H; SiGe:H; amorphous silicon; nonDrude response; power-law frequency dependence characteristic; time-resolved THz spectroscopy; ultrafast conductivity;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
