DocumentCode
2090892
Title
A low donor concentration retrograde profile Si bipolar transistor for low-temperature BiCMOS LSI´s
Author
Imai, K. ; Kinoshita, Y. ; Yamazaki, T. ; Tatsumi, T. ; Tashiro, T.
Author_Institution
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fYear
1994
fDate
7-9 June 1994
Firstpage
159
Lastpage
160
Abstract
To improve low-temperature characteristics of n-p-n Si homojunction bipolar transistors (BJT´s), an epitaxial base with a low donor concentration and a retrograde boron profile, is proposed. A fabricated device represents a 3 times higher current gain (/spl beta/) and a 2 times higher cutoff frequency (f/sub T/) than those for a conventional base Si BJT at 83 K.<>
Keywords
BiCMOS integrated circuits; bipolar transistors; cryogenics; doping profiles; elemental semiconductors; large scale integration; silicon; 83 K; Si:B; epitaxial base; homojunction bipolar transistors; low donor concentration; low-temperature BiCMOS LSI; low-temperature characteristics; n-p-n BJT; retrograde B profile; Acceleration; BiCMOS integrated circuits; Bipolar transistors; Boron; Current density; Impurities; Laboratories; Large scale integration; National electric code; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324408
Filename
324408
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