Title :
Ultrathin (<30 /spl Aring/) storage capacitor dielectrics prepared by in-situ multiprocessing and low pressure rapid thermal N/sub 2/O reoxidation
Author :
Yoon, G.W. ; Kim, J. ; Han, L.K. ; Yan, J. ; Kwong, D.L.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
High quality, ultrathin (<30 /spl Aring/) SiO/sub 2/-Si/sub 3/N/sub 4/ (ON) stacked film capacitors have been fabricated by in-situ multiprocessing and low pressure rapid-thermal N/sub 2/O reoxidation (LRTNO) of Si/sub 3/N/sub 4/ films. Si/sub 3/N/sub 4/ film was deposited on the RTN-treated poly-Si by rapid-thermal chemical vapor deposition (RTCVD) using SiH/sub 4/ and NH/sub 3/, followed by in-situ low pressure rapid-thermal reoxidation in N/sub 2/O (LRTNO) or in O/sub 2/ (LRTO) ambient. Results show that ultrathin (T/sub ox,eq/=29 /spl Aring/) ON stacked film capacitors with LRTNO have excellent electrical properties and reliability.<>
Keywords :
DRAM chips; capacitors; chemical vapour deposition; dielectric thin films; integrated circuit technology; metal-insulator-semiconductor devices; oxidation; rapid thermal processing; silicon compounds; 30 A; N/sub 2/O; NH/sub 3/; O/sub 2/; RTCVD; Si; Si/sub 3/N/sub 4/ films; SiH/sub 4/; SiO/sub 2/-Si/sub 3/N/sub 4/-Si; chemical vapor deposition; electrical properties; in-situ multiprocessing; low pressure RTO; poly-Si; polysilicon; rapid thermal N/sub 2/O reoxidation; rapid-thermal CVD; reliability; stacked film capacitors; ultrathin storage capacitor dielectrics; Breakdown voltage; Capacitors; Dielectrics; Leakage current; Oxidation; Paper technology; Random access memory; Semiconductor films; Stress; Very large scale integration;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324410
