A new large signal model for heterojunction bipolar transistors including temperature effects

Author

Baureis, P. ; McKinley, W. ; Seitzer, D.

Author_Institution

Fraunhofer Inst. for Integrated Circuits, Erlangen, West Germany

fYear

1991

fDate

12-15 May 1991

Abstract

The authors describe an eight-node heterojunction bipolar transistor model suitable for circuit simulation, for which the Gummel-Poon model was used as a basis. Both the large-signal DC characteristics and the small-signal behavior up to 18 GHz are accurately modeled. The nonlinear current gain associated with HBTs (heterojunction bipolar transistors) is included as well as nonlinear intrinsic base and collector resistances. The negative output conductance seen at high current levels is modeled as a reduction in current proportional to the power output of the transistor. The proposed model is suitable for circuit simulation and has been implemented in SPICE2 version G.6, PSPICE, and HP Microwave Design System MDS

Keywords

heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; 18 GHz; Gummel-Poon model; HBTs; HP Microwave Design System; MDS; PSPICE; SPICE2 version G.6; circuit simulation; collector resistances; eight-node model; heterojunction bipolar transistors; large signal model; large-signal DC characteristics; negative output conductance; nonlinear current gain; nonlinear intrinsic base resistance; small-signal behavior; temperature effects; Bipolar integrated circuits; Current measurement; Electrical resistance measurement; Equivalent circuits; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Power measurement; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0015-7

Type

conf

DOI

10.1109/CICC.1991.164126

Filename

164126