DocumentCode
2090977
Title
La doped PZT films for gigabit DRAM technology
Author
Jiyoung Kim ; Khamankar, R. ; Sudhama, C. ; Bo Jiang ; Lee, J. ; Maniar, P. ; Moazzami, R. ; Jones, R. ; Mogab, C.J.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
1994
fDate
7-9 June 1994
Firstpage
151
Lastpage
152
Abstract
Very low leakage current density (5/spl times/10/sup -7/ A/cm/sup 2/ even at 125/spl deg/C) and high charge storage density (100 fCspl mu/m/sup 2/) under V/sub DD2=1 V conditions have been achieved using 5% La doped PZT films for gigabit DRAM capacitor dielectrics. In addition, the fatigue and TDDB measurements indicate good reliability of this capacitor.<>
Keywords
DRAM chips; MOS integrated circuits; VLSI; circuit reliability; dielectric thin films; electric breakdown of solids; integrated circuit technology; lanthanum; lead compounds; piezoelectric materials; 125 degC; PZT:La; PZT:La films; PbZrO3TiO3:La; TDDB measurement; capacitor dielectrics; charge storage density; fatigue; gigabit DRAM technology; leakage current density; reliability; Capacitance; Capacitors; Degradation; Dielectrics; Doping; Fatigue; Lead; Leakage current; Random access memory; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324412
Filename
324412
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