New hot-carrier degradation mechanisms in 0.25 /spl mu/m PMOSFETs

Author

Woltjer, R. ; Paulzen, G.M. ; Pomp, H.G. ; Lifka, H. ; Woerlee, P.H.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1994

fDate

7-9 June 1994

Firstpage

141

Lastpage

142

Abstract

PMOSFET hot-carrier reliability is often proposed to he limited by negative oxide charge. We show that interface states determine the lifetime in deep submicron PMOSFETs. Clear evidence for additional positive oxide-charge generation is presented for the first time. The bias-length and time dependences are measured for all three degradation mechanisms. Combining these three mechanism describes the time dependence of PMOSFET degradation convincingly for many geometries at many bias conditions.<>

Keywords

hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device testing; 0.25 micron; PMOSFETs; bias conditions; bias-length dependences; deep submicron devices; hot-carrier degradation mechanisms; interface states; negative oxide charge; positive oxide-charge generation; reliability; time dependences; Charge pumps; Degradation; Electrons; Equations; Hot carriers; Interface states; Low voltage; MOSFETs; Power generation; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1921-4

Type

conf

DOI

10.1109/VLSIT.1994.324417

Filename

324417

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2091080