DocumentCode
2091083
Title
Modelling of deviations between static and dynamic drain characteristics in GaAs FETs
Author
Filicori, F. ; Vannini, G. ; Mediavilla, A. ; Tazon, A.
Author_Institution
Istituto di Ingegneria, UniversitÃ\xa0 di Ferrara, Via Scandiana 21 44100 Ferrara, Italy.
fYear
1993
fDate
6-10 Sept. 1993
Firstpage
454
Lastpage
457
Abstract
A new approach is proposed for the accurate modelling of dynamic (e.g., pulsed) drain characteristics in GaAs FETs. It can be easily implemented in the framework of Harmonic-Balance tools for nonlinear circuit analysis and design. The model takes simultaneously into account low-frequency dispersive phenomena due to surface state densities, deep level traps and thermal effects. It is based on mild assumptions confirmed both by theoretical considerations and preliminary experimental results for GaAs MESFETs.
Keywords
Dispersion; Electron devices; Electron traps; FETs; Gallium arsenide; MESFETs; Power dissipation; Pulse measurements; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1993. 23rd European
Conference_Location
Madrid, Spain
Type
conf
DOI
10.1109/EUMA.1993.336594
Filename
4136655
Link To Document