DocumentCode
2091105
Title
Large-signal modelling of Dual-Gate GaAs MESFETs
Author
Filicori, F. ; Vannini, G. ; Monaco, V.A.
Author_Institution
Istituto di Ingegneria, UniversitÃ\xa0 di Ferrara, Via Scandiana 21-44100 Ferrara, Italy.
fYear
1993
fDate
6-10 Sept. 1993
Firstpage
458
Lastpage
461
Abstract
A mathematical approach, which has been recently proposed for the nonlinear modelling of microwave transistors, is adopted for the large-signal performance prediction of Dual-Gate GaAs MESFETs in the framework of Harmonic-Balance circuit analysis. Unlike classical equivalent circuits, the nonlinear model adopted here can be directly identifled on the bases of DC characteristics and small-signal biasdependent AC parameters without need for optimisation-based procedures for parameter extraction. The validity of the large-signal modelling approach is confirmed by accurate physics-based numerical simulations of a Dual-Gate GaAs MESFET mixer.
Keywords
Circuit analysis; Electron devices; Equivalent circuits; Frequency; Gallium arsenide; Integrated circuit modeling; MESFETs; Parameter extraction; Predictive models; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1993. 23rd European
Conference_Location
Madrid, Spain
Type
conf
DOI
10.1109/EUMA.1993.336595
Filename
4136656
Link To Document