Mixed mode simulation of slow transient effects in AlGaAs/GaAs HEMT inverters

Author

Tahui Wang ; Wu, Sheng-Jyh

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan

fYear

1991

fDate

12-15 May 1991

Abstract

A mixed level device and circuit analysis has been performed to study the DX-trap-induced slow transient effects on the performance degradation of AlGaAs/GaAs HEMT (high electron mobility transistor) circuits. The variation of the output pulse width and the hysteretic characteristics of the input-output voltage transfer function in DCFL (direct coupled FET logic) HEMT inverters have been simulated. It is shown that the output pulse broadening phenomena in a string of cascaded DCFL HEMT inverters are a consequence of the inverter voltage transfer function shift caused by deep traps

Keywords

III-V semiconductors; aluminium compounds; electron traps; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated logic circuits; semiconductor device models; simulation; transients; AlGaAs-GaAs; DCFL; DX centres; HEMT inverters; deep traps; direct coupled FET logic; high electron mobility transistor; hysteretic characteristics; input-output voltage transfer function; mixed mode simulation; output pulse broadening phenomena; output pulse width; slow transient effects; Circuit analysis; Circuit simulation; Degradation; Gallium arsenide; HEMTs; Pulse inverters; Pulse width modulation inverters; Transfer functions; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0015-7

Type

conf

DOI

10.1109/CICC.1991.164134

Filename

164134