Title :
An electrothermal circuit simulation using an equivalent thermal network for electrostatic discharge (ESD)
Author :
Kurimoto, K. ; Yamashita, Katsumi ; Miyanaga, I. ; Hori, A. ; Odanaka, S.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
This paper describes an electrothermal circuit simulation using an equivalent thermal network for electrostatic discharge (ESD). Electrothermal transient characteristics in ESD protection devices are clarified in detail by modeling of complicated snapback behavior and thermal modeling in the multiple layer. The new model allows the simulation for the damage region and failure thresholds of n-MOSFETs under ESD stress conditions.<>
Keywords :
CMOS integrated circuits; electrostatic discharge; equivalent circuits; insulated gate field effect transistors; protection; semiconductor device models; simulation; thermal analysis; ESD protection devices; ESD stress conditions; NMOSFET; damage region; electrostatic discharge; electrothermal circuit simulation; electrothermal transient characteristics; equivalent thermal network; failure thresholds; multiple layer; n-MOSFETs; n-channel devices; snapback behavior; thermal modeling; Biological system modeling; Capacitance; Circuit simulation; Diodes; Electrostatic discharge; Electrothermal effects; MOSFET circuits; Protection; Stress; Temperature;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324424
