DocumentCode
2091340
Title
Improved Yield in Nanotechnology Circuits Using Non-square Meshes
Author
Argyrides, Costas ; Mavrogiannakis, Nikolaos ; Pradhan, Dhiraj K.
Author_Institution
Dept. of Comput. & Electron., Oxford Brookes Univ., Oxford, UK
fYear
2010
fDate
5-7 July 2010
Firstpage
410
Lastpage
415
Abstract
Nanotechnology based fabrication, which relies on self-assembly of nanotubes or nanowires has been predicted to be an alternative to silicon technology since lithography based IC is approaching its limit in terms of feature size. However, such processes are expected to have high defect density and have be handled with effective defect tolerant techniques. In this paper, we propose a technique, which for a given circuit size, utilizes different combinations of defect-free non-square but rectangular crossbars to construct the desired circuit with improved yield. We extend our recently proposed algorithm to cope with non-square meshes. We aim to improve the number of defect-free crossbars and also to improve the total yield by connecting defect-free non-square but rectangular subsets together. We also estimate the reliability of the resulting circuits and observed that while the yield increases significantly in our architecture, the reliability, however, decreases due to the increased number of interconnects. Finally, we provide a guideline to optimize the architecture making an optimal trade off between the yield and the reliability.
Keywords
integrated circuit interconnections; integrated circuit reliability; integrated circuit yield; nanoelectronics; self-assembly; circuit reliability; circuit yield; defect tolerant techniques; defect-free crossbars; interconnects; lithography based IC; nanotechnology circuits; nanotubes; nanowires; nonsquare meshes; rectangular crossbars; self-assembly; silicon technology; Algorithm design and analysis; Approximation algorithms; Fabrication; Integrated circuit interconnections; Integrated circuit reliability; Partitioning algorithms; Nanotechnology; fault tolerance; reliability; yield;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI (ISVLSI), 2010 IEEE Computer Society Annual Symposium on
Conference_Location
Lixouri, Kefalonia
Print_ISBN
978-1-4244-7321-2
Type
conf
DOI
10.1109/ISVLSI.2010.113
Filename
5572820
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