• DocumentCode
    2091445
  • Title

    Direct extraction of noise sources for MESFET´s and HEMT´s

  • Author

    Byzery, B.

  • Author_Institution
    Laborotoires d´´Electronique Philips/Philips Microwave Limeil, 22, Avenue Descartes- 94453 Limeil-Brevannes Cedex, France. Té1. 1.45.10.68.85- Fax 1.45.10.69.53
  • fYear
    1993
  • fDate
    6-10 Sept. 1993
  • Firstpage
    508
  • Lastpage
    510
  • Abstract
    The purpose of this paper is to present a simple and direct technique (direct means no optimization or assumption) to determine the noise sources from scattering parameters and noise measurements. The proposed noise sources formula can be directly implemented into commercial simulation software and are included in our Foundry Design Manuals.
  • Keywords
    FETs; Frequency; HEMTs; Impedance; Low-frequency noise; MESFETs; Noise figure; Noise measurement; Roentgenium; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1993. 23rd European
  • Conference_Location
    Madrid, Spain
  • Type

    conf

  • DOI
    10.1109/EUMA.1993.336609
  • Filename
    4136670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2091445