The effects of nitrogen implantation into P/sup +/ poly-silicon gate on gate oxide properties

Author

Kuroi, T. ; Kusunoki, S. ; Shirahata, M. ; Okumura, Y. ; Kobayashi, M. ; Inuishi, M. ; Tsubouchi, N.

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1994

fDate

7-9 June 1994

Firstpage

107

Lastpage

108

Abstract

We have studied the effects of nitrogen implantation into P/sup +/ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 /spl mu/m. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P/sup +/ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvements would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.<>

Keywords

electron traps; hot carriers; insulated gate field effect transistors; interface electron states; ion implantation; 0.25 micron; P/sup +/ polysilicon gate; PMOSFETs; Si:N; electron traps; gate oxide properties; hot carrier injection; interface states; ion implantation; surface channel PMOS; Annealing; Boron; Doping; Hot carriers; MOSFETs; Nitrogen; Semiconductor films; Silicon; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1921-4

Type

conf

DOI

10.1109/VLSIT.1994.324432

Filename

324432