Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs

Author

Markov, Stanislav ; Amoroso, Salvatore Maria ; Gerrer, Louis ; Adamu-Lema, F. ; Asenov, Asen

Author_Institution

Device Modeling Group, Univ. of Glasgow, Glasgow, UK

Volume

34

Issue

5

fYear

2013

fDate

May-13

Firstpage

686

Lastpage

688

Abstract

We report a thorough 3-D simulation study of the correlation between multiple, trapped charges in the gate oxide of nanoscale bulk MOSFETs under bias and temperature instability (BTI). The role of complex electrostatic interactions between the trapped charges in the presence of random dopant fluctuations is evaluated, and their impact on the distribution of the threshold voltage shift and on the distribution of the number of trapped charges is analyzed. The results justify the assumptions of a Poisson distribution of the BTI-induced trapped charges and of the lack of correlation between them, when accounting for time-dependent variability in circuits.

Keywords

MOSFET; statistical analysis; 3D simulation; BTI stress; electrostatic interactions; gate oxide; multiple oxide traps; nanoscale bulk MOSFET; statistical interactions; temperature instability; Bias and temperature instability (BTI); complimentary metal–oxide–semiconductor (CMOS); random telegraph noise (RTN); reliability; variability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2253541

Filename

6502190