Title :
Highly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cells
Author :
Yu Lin Tsai ; Hsin-Chu Chen ; Chien-Chung Lin ; Hau-Vei Han ; Peichen Yu ; Hao-Chung Kuo
Author_Institution :
Dept. of Photonic, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We demonstrate a hybrid design of InGaN/GaN multiple quantum well (MQW) solar cells combined with colloidal CdS quantum dots. With anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency by as high as 7.2% compared to the no CdS quantum dots coated device.
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; colloids; gallium compounds; indium compounds; quantum well devices; semiconductor quantum dots; semiconductor quantum wells; solar cells; wide band gap semiconductors; CdS; InGaN-GaN; InGaN-GaN multiple quantum well solar cells; UV regime; colloidal CdS quantum dots; highly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cells; hybrid design; overall power conversion efficiency;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
