Title :
AlGaN/GaN Schottky Diode Fabricated by Au Free Process
Author :
Lifang Jia ; Wei Yan ; Zhongchao Fan ; Zhi He ; Xiaodong Wang ; Guohong Wang ; Fuhua Yang
Author_Institution :
Eng. Res. Center for Semicond. Integration Technol., Inst. of Semicond., Beijing, China
Abstract :
An AlGaN/GaN Schottky diode is fabricated using an Au free process. Both ohmic and Schottky contact are studied. The ohmic contact results show low contact resistance and good surface morphology. The specific resistance (ρc) and contact resistance (Rc) of the ohmic contact are ~ 3.5×10-5 Ω×cm2 and 2.1 Ω·mm, respectively. Several current transport mechanisms are employed to analyze the measured I- V curves of the diode. The data have demonstrated that at a lower forward bias the combination of generation recombination and tunneling current mechanisms are dominant, whereas the thermionic emission mechanism becomes more significant at a higher forward bias. The effective Schottky barrier height is estimated to be 0.99 eV. The breakdown voltage of AlGaN/GaN Schottky diode is ~ 125 V.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; contact resistance; gold; ohmic contacts; semiconductor device breakdown; surface morphology; tunnelling; wide band gap semiconductors; AlGaN-GaN; Au; I- V curves; Schottky barrier height; Schottky contact; Schottky diode; breakdown voltage; contact resistance; current transport mechanisms; forward bias; generation recombination; gold free process; ohmic contact; specific resistance; surface morphology; thermionic emission mechanism; tunneling current mechanisms; Aluminum gallium nitride; Gallium nitride; Gold; Ohmic contacts; Resistance; Schottky diodes; Tin; AlGaN/GaN; Au free; Schottky barrier height; ohmic contact; reverse property;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2278337
