DocumentCode :
2092134
Title :
Electron-beam assisted platinum deposition as a protective layer for FIB and TEM applications
Author :
Kwong, W.Y. ; Zhang, W.Y.
Author_Institution :
Systems on Silicon Mfg Co., Singapore, Singapore
fYear :
2005
fDate :
13-15 Sept. 2005
Firstpage :
469
Lastpage :
471
Abstract :
In FIB (focused ion beam) applications, ion beam (Ga+) assisted Pt deposition is commonly used as a protection layer for subsequent milling for cross-section or TEM sample preparation. But the damage induced by ion beam during Pt deposition makes tiny feature analysis very difficult or impossible. In this paper, a new method by using two deposition steps, first using electron beam induced Pt deposition then subsequently follow by ion beam induced Pt deposition, was developed to address the above tough issues. By this new method, nearly no damage was introduced to the features of interest during Pt deposition. This new technique was applied to practical FA cases and demonstrated to be successful.
Keywords :
electron beam deposition; integrated circuit manufacture; ion beam assisted deposition; platinum; protective coatings; transmission electron microscopy; electron-beam assisted platinum deposition; focused ion beam; ion beam induced platinum deposition; protective layer; Acceleration; Amorphous materials; Electron beams; Ion beams; Milling; Platinum; Protection; Silicon; Strips; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN :
0-7803-9143-8
Type :
conf
DOI :
10.1109/ISSM.2005.1513408
Filename :
1513408
Link To Document :
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