Post-WCMP leakage detection and monitoring on 65-nm devices using an advanced e-beam inspection system

Author

Wang, Kirin ; Liu, Hermes ; Yeh, J.H. ; Tsai, Mingsheng ; Wu, Wei-Yih ; Wu, Hong-Chi ; Xiao, Hong ; Jau, Jack

Author_Institution

Central Res. & Dev., United Microelectron. Corp., Tainan, Taiwan

fYear

2005

fDate

13-15 Sept. 2005

Firstpage

472

Lastpage

475

Abstract

N+/P-well junction leakage was studied with an electron beam (e-beam) inspection system by detection of the gray level of the tungsten plug (W-plug) in the defect images of post tungsten chemical mechanical polish (WCMP) inspection. Leakage results of wafer acceptance tests (WAT) show a strong correlation with the e-beam inspection results. Failure analysis results reveal that the junction leakage is caused by lateral diffusion of nickel silicide underneath the spacer. The extrusion length correlates with the gray level of the tungsten plug very well.

Keywords

chemical mechanical polishing; electron beam testing; failure analysis; inspection; integrated circuit manufacture; integrated circuit testing; semiconductor junctions; tungsten; 65 nm; NiSi; W; e-beam inspection system; electron beam inspection system; extrusion length; failure analysis; junction leakage; lateral diffusion; leakage detection; leakage monitoring; tungsten chemical mechanical polish inspection; tungsten plug; wafer acceptance tests; Chemicals; Electron beams; Failure analysis; Inspection; Leak detection; Monitoring; Nickel; Plugs; Testing; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on

Print_ISBN

0-7803-9143-8

Type

conf

DOI

10.1109/ISSM.2005.1513409

Filename

1513409