DocumentCode
2092182
Title
Sphere defects prevention on shallow trench isolation etch
Author
Leong Tse Meng ; Swee, Goh Inn ; Bonar, John ; Wei, Lim Yin ; Han, Henry ; Jin, Kim Hong ; Wei, Poh Choon
Author_Institution
System on Silicon Manufacturing Co. Pte. Ltd., Singapore, Singapore
fYear
2005
fDate
13-15 Sept. 2005
Firstpage
476
Lastpage
478
Abstract
This paper presents our study on the cause of sphere defects in shallow trench isolation etching and preventive measures put in place. Sphere defects are generated as a result of microarcing due to deterioration of ESC chuck condition. To detect sphere defects, ESC leakage current is a good gauge to determine the sign of ESC breakdown. Solution to prevent sphere defects and monitor ESC chuck lifetime was discussed in this paper.
Keywords
crystal defects; etching; integrated circuit manufacture; leakage currents; ESC breakdown; ESC chuck lifetime; leakage current; microarcing; shallow trench isolation etching; sphere defect prevention; Aluminum; Dielectrics; Etching; Fluid flow; Leakage current; Manufacturing; Plasma applications; Radio frequency; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN
0-7803-9143-8
Type
conf
DOI
10.1109/ISSM.2005.1513410
Filename
1513410
Link To Document