Title :
Sphere defects prevention on shallow trench isolation etch
Author :
Leong Tse Meng ; Swee, Goh Inn ; Bonar, John ; Wei, Lim Yin ; Han, Henry ; Jin, Kim Hong ; Wei, Poh Choon
Author_Institution :
System on Silicon Manufacturing Co. Pte. Ltd., Singapore, Singapore
Abstract :
This paper presents our study on the cause of sphere defects in shallow trench isolation etching and preventive measures put in place. Sphere defects are generated as a result of microarcing due to deterioration of ESC chuck condition. To detect sphere defects, ESC leakage current is a good gauge to determine the sign of ESC breakdown. Solution to prevent sphere defects and monitor ESC chuck lifetime was discussed in this paper.
Keywords :
crystal defects; etching; integrated circuit manufacture; leakage currents; ESC breakdown; ESC chuck lifetime; leakage current; microarcing; shallow trench isolation etching; sphere defect prevention; Aluminum; Dielectrics; Etching; Fluid flow; Leakage current; Manufacturing; Plasma applications; Radio frequency; Silicon; Voltage;
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN :
0-7803-9143-8
DOI :
10.1109/ISSM.2005.1513410
