DocumentCode
2092860
Title
BAW Microwave temperature sensor
Author
Alekseev, S.G. ; Mansfeld, G.D. ; Kotelanskii, I.M. ; Veretin, V.S.
Author_Institution
Inst. of Radioengineering & Electron., RAS, Moscow
fYear
2004
fDate
5-7 April 2004
Firstpage
569
Lastpage
569
Abstract
This work is aimed at the study of a potential possibilities of microwave Bulk Acoustic Wave resonators for temperature measurements. The resonators under study had nonstandard high overtone BAW resonator configuration: a thin piezoelectric film ZnO with electrodes was deposited onto the surface of the substrate made of the (100) oriented YAG plate with the thickness 480... 980 mum. The new technical solution was that resonator was acoustically isolated and protected from the ambient mechanical influence. For this purpose the bottom side of the plate and the top electrode of the resonator structure were isolated from ambient by a nine-layer Bragg Ti-W quarter-wave length thin film reflectors. Due to the isolation it can become no sensitive even to liquids getting on the surfaces of the resonator. Total thickness of all deposited layers was less than 12mum. The resonator aperture was less than 600mum.
Keywords
III-V semiconductors; acoustic resonators; bulk acoustic wave devices; microwave detectors; piezoelectric thin films; semiconductor thin films; surface acoustic wave sensors; temperature measurement; temperature sensors; thin film sensors; wide band gap semiconductors; zinc compounds; BAW microwave temperature sensor; Ti-W; ZnO; bulk acoustic wave resonator; nine-layer Bragg reflector; quarter-wave length thin film reflector; temperature measurement;
fLanguage
English
Publisher
iet
Conference_Titel
Frequency and Time Forum, 2004. EFTF 2004. 18th European
Conference_Location
Guildford
ISSN
0537-9989
Print_ISBN
0-86341-384-6
Type
conf
Filename
5075019
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