DocumentCode
2092866
Title
RFI-induced failures in switched capacitor circuits
Author
Crovetti, Paolo S. ; Fiori, Franco
Author_Institution
Dipt. di Elettronica, Politecnico di Torino, Turin
Volume
1
fYear
2005
fDate
12-12 Aug. 2005
Firstpage
56
Lastpage
59
Abstract
In this paper, the failures which are induced by radio-frequency interference (RFI) in switched capacitor (SC) circuits are investigated and the key role which is played by the distortion of MOS switches in the on state is highlighted. Such a distortion mechanism is analyzed in detail and a new simple analytical model which enables one to predict RFI-induced errors in SC circuits is proposed. The validity of this model is verified by comparison of model predictions and time-domain computer simulation results
Keywords
MIS devices; distortion; radiofrequency interference; semiconductor switches; switched capacitor networks; MOS switches; distortion mechanism; radio-frequency interference; switched capacitor circuits; Analytical models; Computer errors; MOS capacitors; Predictive models; Radio frequency; Radiofrequency interference; Switched capacitor circuits; Switches; Switching circuits; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility, 2005. EMC 2005. 2005 International Symposium on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-9380-5
Type
conf
DOI
10.1109/ISEMC.2005.1513471
Filename
1513471
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