Title :
Tensile-strained InGaAsP-InP quantum-well laser with coupled disks emitting at 1.5µm
Author :
Qi-Feng Yao ; Yong-Zhen Huang ; Yun Du ; Xiao-Meng Lv ; Ling-Xiu Zou ; Heng Long
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
Abstract :
We fabricate a tensile-strained InGaAsP-InP quantum-well (QW) laser with coupled two disks, emitting at 1.5μm. For a microdisk with radius of 10μm and a 2-μm-wide output waveguide, a continuous-wave (CW) threshold current is 24mA at room temperature and the mode intervals of 2 and 5.3nm are observed, corresponding to splitting of symmetric and asymmetric modes, and longitude mode space. The peak intensity of main mode is 25dB higher than the background with the wavelength of 1522nm at 115mA.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; microdisc lasers; quantum well lasers; InGaAsP-InP; asymmetric modes; coupled disks; current 115 mA; current 24 mA; longitude mode space; microdisk lasers; size 10 mum; size 2 mum; temperature 293 K to 298 K; tensile strained quantum well laser; wavelength 1.5 mum; wavelength 1522 nm;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
