• DocumentCode
    2093254
  • Title

    GaSb-based laser monolithically grown on Si substrate operating under cw at room temperature

  • Author

    Tournie, E. ; Reboul, J.R. ; Madiomanana, K. ; Cerutti, L. ; Rodriguez, J.B.

  • Author_Institution
    Inst. d´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
  • fYear
    2012
  • fDate
    7-10 Nov. 2012
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    GaSb-based devices allow covering the whole near- to mid-IR wavelength range. We will present our results in developing 1.55 μm lasers and their direct integration onto Si substrates.
  • Keywords
    III-V semiconductors; gallium compounds; integrated optics; semiconductor lasers; GaSb; GaSb-based laser; Si; Si substrate; cw operation; direct integration; mid-IR wavelength; monolithic growth; near-IR wavelength; temperature 293 K to 298 K; wavelength 1.55 mum;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference (ACP), 2012 Asia
  • Conference_Location
    Guangzhou
  • ISSN
    2162-108X
  • Print_ISBN
    978-1-4673-6274-0
  • Type

    conf

  • Filename
    6510769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2093254