Title :
GaSb-based laser monolithically grown on Si substrate operating under cw at room temperature
Author :
Tournie, E. ; Reboul, J.R. ; Madiomanana, K. ; Cerutti, L. ; Rodriguez, J.B.
Author_Institution :
Inst. d´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
Abstract :
GaSb-based devices allow covering the whole near- to mid-IR wavelength range. We will present our results in developing 1.55 μm lasers and their direct integration onto Si substrates.
Keywords :
III-V semiconductors; gallium compounds; integrated optics; semiconductor lasers; GaSb; GaSb-based laser; Si; Si substrate; cw operation; direct integration; mid-IR wavelength; monolithic growth; near-IR wavelength; temperature 293 K to 298 K; wavelength 1.55 mum;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
