DocumentCode
2093321
Title
Three-dimensional computation of the thermal parameters of multiple-gate power FETs
Author
Rizzoli, Vittorio ; Lipparini, Alessandro ; Costanzo, Alessandra ; Frontini, Valeria
Author_Institution
Dipartimento di Elettronica, informatica e Sistemistica, University of Bologna Villa Griffone, 40044 Pontecchio Morconi, Bologna - ITALY
fYear
1993
fDate
6-10 Sept. 1993
Firstpage
698
Lastpage
700
Abstract
The paper discusses a 3D numerical approach to the computation of the thermal parameters of multiple-finger semiconductor devices. The analysis relies upon an electrical analogy of the temperature field and makes use of the actual physical dimensions of all electrodes. The thermal nonlinearity of real devices is taken into account. The numerical results are supported by comparison with the results of an infrared thermal scanning of a 2 mm MESFET.
Keywords
Capacitance; Dielectric substrates; Electrodes; FETs; Semiconductor devices; Strips; Temperature distribution; Thermal conductivity; Thermal resistance; Transmission line matrix methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1993. 23rd European
Conference_Location
Madrid, Spain
Type
conf
DOI
10.1109/EUMA.1993.336676
Filename
4136737
Link To Document