DocumentCode :
2093321
Title :
Three-dimensional computation of the thermal parameters of multiple-gate power FETs
Author :
Rizzoli, Vittorio ; Lipparini, Alessandro ; Costanzo, Alessandra ; Frontini, Valeria
Author_Institution :
Dipartimento di Elettronica, informatica e Sistemistica, University of Bologna Villa Griffone, 40044 Pontecchio Morconi, Bologna - ITALY
fYear :
1993
fDate :
6-10 Sept. 1993
Firstpage :
698
Lastpage :
700
Abstract :
The paper discusses a 3D numerical approach to the computation of the thermal parameters of multiple-finger semiconductor devices. The analysis relies upon an electrical analogy of the temperature field and makes use of the actual physical dimensions of all electrodes. The thermal nonlinearity of real devices is taken into account. The numerical results are supported by comparison with the results of an infrared thermal scanning of a 2 mm MESFET.
Keywords :
Capacitance; Dielectric substrates; Electrodes; FETs; Semiconductor devices; Strips; Temperature distribution; Thermal conductivity; Thermal resistance; Transmission line matrix methods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
Type :
conf
DOI :
10.1109/EUMA.1993.336676
Filename :
4136737
Link To Document :
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