DocumentCode :
2093413
Title :
Efficient characterization of millimetric TW FET´s with finite metallization
Author :
Rozzi, T. ; Gerini, G. ; Farina, M.
Author_Institution :
Dipartimento di Elettronica ed Automotica, UniversitÃ\xa0 degli Studi di Ancona, 60131 Ancona, ITALY. Tel.: +39 71 2204840; Fax: +39 71 898246; E-Mail rozzi@hpe101.cineca.it
fYear :
1993
fDate :
6-10 Sept. 1993
Firstpage :
708
Lastpage :
709
Abstract :
In order to evaluate the propagation characteristics of distributed FET´s we have developed a rigorous and efficient field analysis technique, that is particularly suited for CAD applications to lossy planar circuits with finite metallization. This approach allowed us to compute the accurate dispersion curves of a totally asymmetric three-conductor structure with finite electrode thickness, metallic and dielectric losses by means of a desktop computer.
Keywords :
Application software; Conductors; Dielectric losses; Eigenvalues and eigenfunctions; FETs; Integral equations; Metallization; Propagation constant; Propagation losses; Strips;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
Type :
conf
DOI :
10.1109/EUMA.1993.336679
Filename :
4136740
Link To Document :
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