Title :
Low power consumption Ge/SiGe quantum well optical modulator
Author :
Marris-Morini, D. ; Chaisakul, Papichaya ; Rouifed, Mohamed-Said ; Isella, Giovanni ; Chrastina, D. ; Frigerio, Jacopo ; Le Roux, X. ; Edmond, Samson ; Coudevylle, Jean-Rene ; Vivien, L.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
Abstract :
Ge/SiGe quantum well waveguide modulator is demonstrated, working with 1V bias swing, and energy consumption as low as 108 fJ per bit. The modulator shows a 3dB bandwidth of 23 GHz.
Keywords :
Ge-Si alloys; Stark effect; integrated optics; optical modulation; optical waveguides; quantum well devices; Ge-SiGe; Stark effect; bandwidth 23 GHz; quantum well optical modulator; quantum well waveguide modulator; voltage 1 V; Ge/SiGe; Quantum-confined Stark effect; multiple quantum well modulators;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
