Title :
Design of traveling wave electrode for high-speed silicon modulators
Author :
Yanyang Zhou ; Linjie Zhou ; Xiaomeng Sun ; Jianping Chen
Author_Institution :
Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
We design a traveling wave electrode to drive carrier-depletion-based silicon modulators. By optimizing the electrode on top of the active region and the connection transmission line, the impedance can be matched to 50 Ohm. The 3-dB bandwidth of the modulator can be up to 40 GHz, mainly limited by the velocity mismatch.
Keywords :
elemental semiconductors; optical modulation; silicon; transmission lines; carrier-depletion-based modulators; frequency 40 GHz; high-speed modulators; resistance 50 ohm; transmission line; traveling wave electrode design;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
