DocumentCode
2094373
Title
Design of traveling wave electrode for high-speed silicon modulators
Author
Yanyang Zhou ; Linjie Zhou ; Xiaomeng Sun ; Jianping Chen
Author_Institution
Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
3
Abstract
We design a traveling wave electrode to drive carrier-depletion-based silicon modulators. By optimizing the electrode on top of the active region and the connection transmission line, the impedance can be matched to 50 Ohm. The 3-dB bandwidth of the modulator can be up to 40 GHz, mainly limited by the velocity mismatch.
Keywords
elemental semiconductors; optical modulation; silicon; transmission lines; carrier-depletion-based modulators; frequency 40 GHz; high-speed modulators; resistance 50 ohm; transmission line; traveling wave electrode design;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510816
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