Title :
Performance in R.F. power MOSFET´s amplifier for GSM radiotelephony
Author :
Kassmi, K. ; Oms, F. ; Rossel, P. ; Tranduc, H.
Author_Institution :
LAAS-CNRS, 7 Avenue du Colonel Roche, 31077, Toulouse, Cedex, France, Tel: 33 61 33 62 00 (Fax: 33 61 33 62 08)
Abstract :
With advantages like good power gain, high input impedance and thermal stability, power MOSFET´s working in the GSM radiotelephony UHF channel become more and more serious challengers of bipolar transistors in power amplification domain. Our paper aims to present a model that allows general circuit simulators to deal as well with the study of this kind of devices as with the design of RF power amplifiers or power electronics circuits.
Keywords :
Bipolar transistors; Circuit simulation; Circuit stability; GSM; Impedance; Power amplifiers; Power electronics; Radio frequency; Radiofrequency amplifiers; Thermal stability;
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
DOI :
10.1109/EUMA.1993.336712
