DocumentCode :
2094454
Title :
Dependency of MESFET pinch-off voltage on temperature
Author :
Tellez, J Rodriguez ; Stothard, B P
Author_Institution :
Department of Electronic & Electrical Engineering University of Brodford, BRADFORD, West Yorkshire, BD7 IDP UK. TEL.: +44 274 384008, FAX: +44 274 391521
fYear :
1993
fDate :
6-10 Sept. 1993
Firstpage :
814
Lastpage :
816
Abstract :
DC measurements at different temperatures on MESFET devices indicate that, as the drain current is reduced, the behaviour of the device becomes more susceptible to temperature effects. The data shows that the dependency of the pinch-off point on temperature does not follow a straight line law. Results show that as the temperature is reduced, the dependency of the pinch-off point on the drain-source voltage increases.
Keywords :
Circuit synthesis; Current measurement; Electric variables measurement; MESFETs; Temperature dependence; Temperature measurement; Temperature sensors; Voltage; Wafer bonding; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
Type :
conf
DOI :
10.1109/EUMA.1993.336714
Filename :
4136775
Link To Document :
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