• DocumentCode
    2094454
  • Title

    Dependency of MESFET pinch-off voltage on temperature

  • Author

    Tellez, J Rodriguez ; Stothard, B P

  • Author_Institution
    Department of Electronic & Electrical Engineering University of Brodford, BRADFORD, West Yorkshire, BD7 IDP UK. TEL.: +44 274 384008, FAX: +44 274 391521
  • fYear
    1993
  • fDate
    6-10 Sept. 1993
  • Firstpage
    814
  • Lastpage
    816
  • Abstract
    DC measurements at different temperatures on MESFET devices indicate that, as the drain current is reduced, the behaviour of the device becomes more susceptible to temperature effects. The data shows that the dependency of the pinch-off point on temperature does not follow a straight line law. Results show that as the temperature is reduced, the dependency of the pinch-off point on the drain-source voltage increases.
  • Keywords
    Circuit synthesis; Current measurement; Electric variables measurement; MESFETs; Temperature dependence; Temperature measurement; Temperature sensors; Voltage; Wafer bonding; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1993. 23rd European
  • Conference_Location
    Madrid, Spain
  • Type

    conf

  • DOI
    10.1109/EUMA.1993.336714
  • Filename
    4136775
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2094454