Large signal quantum-well oscillator design

Accurate characterization of the large signal device impedance is very important in the successful design of an oscillator. In this paper we present a simple calculation of a large signal negative conductance of a quantum-well diode. This procedure enables us to calculate negative conductance as a function of rf voltage amplitude across the device, negative conductance as a function of dc bias voltage, and dc-to-rf conversion efficiency available from the device. Correct evaluation of large signal negative conductance is required to stabilize and maximize the oscillator output power. It is especially important for series integrated quantum-well oscillator design, where due to the hard excitation condition a circuit design is very critical.