Title :
Physics of high-efficiency iii-nitride quantum wells light-emitting diodes
Author :
Tansu, N. ; Jing Zhang ; Guangyu Liu ; Hongping Zhao ; Chee-Keong Tan ; Peifen Zhu
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
The review of the approaches to achieve high efficiency III-Nitride based visible and UV light-emitting diodes will be presented. The engineering from nanoscale, microscale, and macroscale in devices will be elaborated for high efficiency devices.
Keywords :
III-V semiconductors; light emitting diodes; quantum well devices; wide band gap semiconductors; UV light emitting diodes; high efficiency devices; quantum wells light emitting diodes;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
