Microstructure development and evolution

Author

Bloomfield, Max O. ; Im, Yeon Ho ; Cale, Timothy S.

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

19

Lastpage

22

Abstract

We employ a level set-based geometry tracking software using a "grain continuum" representation, together with models for selected IC manufacturing processes and for microstructural evolution to study the development of grain structures. We consider electroless deposition, physical vapor deposition and grain boundary migration during curvature-driven ripening. We use an "encapsulation technique" to convert atomistic data; e.g., from Monte Carlo simulations of nucleation, to continua for input to deposition studies.

Keywords

Monte Carlo methods; crystal microstructure; electroless deposition; grain boundary diffusion; nucleation; semiconductor process modelling; vapour deposition; IC manufacturing process models; curvature-driven ripening; electroless deposition; encapsulation technique; grain boundary migration; grain continuum representation; grain structure development; level set-based geometry tracking software; microstructure development; microstructure evolution; nucleation Monte Carlo simulations; physical vapor deposition; Computational modeling; Encapsulation; Geometry; Grain boundaries; Integrated circuit modeling; Microstructure; Partial differential equations; Plasma simulation; Solid modeling; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233627

Filename

1233627