Title :
Microstructure development and evolution
Author :
Bloomfield, Max O. ; Im, Yeon Ho ; Cale, Timothy S.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We employ a level set-based geometry tracking software using a "grain continuum" representation, together with models for selected IC manufacturing processes and for microstructural evolution to study the development of grain structures. We consider electroless deposition, physical vapor deposition and grain boundary migration during curvature-driven ripening. We use an "encapsulation technique" to convert atomistic data; e.g., from Monte Carlo simulations of nucleation, to continua for input to deposition studies.
Keywords :
Monte Carlo methods; crystal microstructure; electroless deposition; grain boundary diffusion; nucleation; semiconductor process modelling; vapour deposition; IC manufacturing process models; curvature-driven ripening; electroless deposition; encapsulation technique; grain boundary migration; grain continuum representation; grain structure development; level set-based geometry tracking software; microstructure development; microstructure evolution; nucleation Monte Carlo simulations; physical vapor deposition; Computational modeling; Encapsulation; Geometry; Grain boundaries; Integrated circuit modeling; Microstructure; Partial differential equations; Plasma simulation; Solid modeling; Surface topography;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
DOI :
10.1109/SISPAD.2003.1233627
