Photoresist flow simulation using the viscous flow model

Author

Chung, Won-Young ; Kim, Tai-Kyung ; Kim, Young-Tae ; Hwang, Byung-Joon ; Park, Young-Kwan ; Kong, Jeong-Taek

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

43

Lastpage

46

Abstract

The PR (photoresist) flow process, applied to contact patterning, is difficult to predict and optimize because a process model does not exist. In this paper, the PR flow simulation method, using a viscous flow model, is developed and applied to examine the effect of initial shape and process conditions on the PR flow phenomena. In addition, this model is used to optimize the layout with the various contacts in the real pattern. This PR flow model, linked to lithography and etch ones, can predict and optimize the contact patterning process in cell, periphery, and TEG (test element group) areas and analyze defects, considering the pre-/post-processes, systematically.

Keywords

circuit optimisation; etching; integrated circuit layout; photolithography; photoresists; plastic flow; semiconductor process modelling; surface tension; PR flow process; contact patterning; defects analysis; etch model; layout optimization; lithography model; photoresist flow simulation; surface tension; test element groups; viscous flow model; Computer aided engineering; Etching; Lithography; Navier-Stokes equations; Predictive models; Research and development; Resists; Solid modeling; Surface tension; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233633

Filename

1233633