DocumentCode :
2095343
Title :
Mobility in UTB-SOI PFETS: local coordinate-based modeling with the density gradient method
Author :
Connelly, Daniel ; Grupp, D.E. ; Leon, Paco ; Yergeau, Dan
Author_Institution :
Acorn Technologies, Palo Alto, CA, USA
fYear :
2003
fDate :
3-5 Sept. 2003
Firstpage :
51
Lastpage :
54
Abstract :
Here, for the first time, a local coordinate-based method is used to model surface acoustic phonon and thickness variation scattering in Si/SiO/sub 2/ PMOS structures using the density-gradient method. A reduction in mobility below that predicted by the electric-field based "universal mobility" curves for ultra-thin-body SOI devices is predicted in excellent agreement with recently published experimental data. An extension to multiple dimensions, demonstrated with some simple examples, is then applied to cylindrical devices, showing the mobility reduction of two-dimensional confinement.
Keywords :
MOSFET; carrier mobility; phonons; semiconductor device models; silicon-on-insulator; surface scattering; 2D confinement; PMOS structures; Si-SiO/sub 2/; UTB-SOI PFETS; carrier mobility; cylindrical devices; density gradient method; local coordinate-based modeling; mobility reduction; multiple dimensions extension; surface acoustic phonon scattering; thickness variation scattering; ultra-thin-body structures; Acoustic devices; Acoustic scattering; Electrons; Gradient methods; Impurities; Particle scattering; Permittivity; Phonons; Potential well; Predictive models;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7826-1
Type :
conf
DOI :
10.1109/SISPAD.2003.1233635
Filename :
1233635
Link To Document :
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