Topography and Schottky contact models applied to NiSi SALICIDE process [MOSFET applications]

Author

Kusunoki, N. ; Ohuchi, K. ; Hokazono, A. ; Aoki, N. ; Tanimoto, H. ; Matsuzawa, K.

Author_Institution

SoC Res. & Dev. Center, Toshiba Corp., Yokohama, Japan

fYear

2003

fDate

3-5 Sept. 2003

Firstpage

59

Lastpage

62

Abstract

Nickel monosilicide (NiSi) is considered to be a promising candidate for the self-aligned silicide (SALICIDE) material of 65 nm node MOSFETs and beyond. Therefore, an accurate simulation method for the NiSi SALICIDE process is required in order to design the optimum device. We realize, for the first time, the integrated simulation with silicide topography and Schottky contact models, and propose a calibration strategy of contact resistance. In this paper, we demonstrate the accurate simulation results of the silicide both in terms of its topography and contact resistance for the NiSi SALICIDE process.

Keywords

MOSFET; Schottky barriers; calibration; contact resistance; nickel compounds; semiconductor device models; semiconductor process modelling; 65 nm; MOSFET; NiSi; NiSi SALICIDE process; Schottky contact model; contact resistance calibration strategy; nickel monosilicide; self-aligned silicide material; topography model; Calibration; Contact resistance; MOSFETs; Nickel; Schottky barriers; Semiconductor device modeling; Silicidation; Silicides; Silicon; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7826-1

Type

conf

DOI

10.1109/SISPAD.2003.1233637

Filename

1233637